FDFC3N108 |
RFQ for FDFC3N108 Required Field |
 |
| Technical/Catalog Information | FDFC3N108 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 3A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 355pF @ 10V |
| Power - Max | 700mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 4.9nC @ 4.5V |
| Package / Case | SSOT-6 |
| FET Feature | Diode (Isolated) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDFC3N108 FDFC3N108 |
| Product | Manufacturers | Pack | D/C |
| FDFC3N108 | - | 06+ | SOT-163 |
This N-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It is combined with a low forward drop Schottky that is isolated from the MOSFET, providing a compact power solution for battery power management and DC/DC converter applications.
Typical Application |
Features |
| · Battery management/Charger Application· DC/DC Conversion | · 3 A, 20 V RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V· Low gate charge· High performance trench technology for extremely low RDS(ON) |
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
20 ±12 3 12 0.96 0.90 0.70 55 to +150 |
V V | |
|
ID |
Drain Current Continuous Pulsed |
(Note 3) |
A | |
|
PD |
Maximum Power Dissipation |
(Note 1) (Note 1a) (Note 1b) |
W | |
|
TJ, TSTG |
Operating and Storage Temperature Range |
°C | ||
